inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor BFG193 description low noise figure nf = 1.3 db typ. @v ce = 8 v, i c = 10 ma, f = 900 mhz high gain s 21e 2 = 13.5 db typ. @v ce = 8 v,i c = 30 ma,f = 900 mhz applications designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ces collector-emitter voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 2 v i c collector current-continuous 80 ma i b base current-continuous 10 ma p c collector power dissipation @t c =25 0.6 w t j junction temperature 150 t stg storage temperature range -65~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor BFG193 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma ; i b = 0 12 v i ces collector cutoff current v ce = 20v; v be = 0 100 a i cbo collector cutoff current v cb = 10v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 1v; i c = 0 1 a h fe dc current gain i c = 30ma ; v ce = 8v 50 200 f t current-gain?bandwidth product i c = 50ma ; v ce = 8v; f= 500mhz 6 8 ghz c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 0.6 0.9 pf pg power gain i c = 30ma ; v ce = 8v; f= 900mhz 15.5 db pg power gain i c = 30ma ; v ce = 8v; f= 1.8ghz 10 db s 21e 2 insertion power gain i c = 30ma ; v ce = 8v; f= 900mhz 13.5 db s 21e 2 insertion power gain i c = 30ma ; v ce = 8v; f= 1.8ghz 8 db nf noise figure i c = 10ma ; v ce = 8v; f= 900mhz 1.3 db nf noise figure i c = 10ma ; v ce = 8v; f= 1.8ghz 2.1 db
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor BFG193
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor BFG193
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor BFG193
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